RAM設置
DDR Configuration Mode : Mode3
GTL+ Driving Strength : Mode2
Enhanced Data transmitting : Fast
Enhanced Addressing : Fast
Channel 1 CLK fine Delay : Auto
Channel 2 CLK fine Delay : Auto
DQ Calibration : 4 ~6
CAS Latency Time (tCL) : 4
DRAM RAS# to CAS# Delay (tRCD) : 4
DRAM RAS# Precharge (tRP) : 4
Precharge Delay (tRAS) : 10
All Precharge to Act : 3
REF to Act Delay (tRFC) : 30
MCH ODT Latency : 1
Write to PRE Delay (tWR) : 9
Rank Write to Read (tWTR) : 9
ACT to ACT Delay (tRRD) : 2
Read to Write Delay (tRDWR) : 8
Ranks Write to Write (tWRWR) : 6
Ranks Read to Read (tRDRD) : 6
Ranks Write to Read (tWRRD) : 5
Read CAS# Precharge (tRTP) : 4
All PRE to Refresh : 4
平常約四十度左右
一跑SP就飊到65度....是用XP-120的散熱器..
如果RAM設置5 5 5 9 (其餘皆只能設AUTO,Enhanced Data transmitting &
Enhanced Addressing 只能設正常)可以2.1V上1000
可是EVERST的RAM測試就只有七千多分了....
我只要RAM設置超過1000就只能跑5 5 5 9...唉...
請大家指教...^^"